GD25LT256EBIRY

Active

GigaDevice Semiconductor (HK) Limited

IC FLSH 256MBIT SPI/QUAD 24TFBGA

Deep-Dive with AI

Search across all available documentation for this part.

GD25LT256EBIRY

Active

GigaDevice Semiconductor (HK) Limited

IC FLSH 256MBIT SPI/QUAD 24TFBGA

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	GD25LT256EBIRY

Clock Frequency	200 MHz
Memory Format	FLASH
Memory Interface	Quad I/O, QPI, SPI, DTR
Memory Organization	32 M
Memory Size	256 Gbit
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	24-TBGA
Supplier Device Package	24-TFBGA (6x8)
Technology	FLASH - NOR
Voltage - Supply [Max]	2 V
Voltage - Supply [Min]	1.65 V

GD25LT256 Series

Part	Technology	Memory Format	Supplier Device Package	Package / Case	Memory Organization	Access Time	Clock Frequency	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Memory Interface	Mounting Type	Memory Size	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Memory Type	Grade	Qualification	Package / Case [x]	Package / Case [y]
GigaDevice Semiconductor (HK) Limited GD25LT256EF2RR	FLASH - NOR	FLASH
GigaDevice Semiconductor (HK) Limited GD25LT256EYIGR	FLASH - NOR (SLC)	FLASH	8-WSON (6x8)	8-WDFN Exposed Pad	32 M	6 ns	200 MHz	2 V	1.65 V	85 °C	-40 °C	DTR QPI Quad I/O SPI	Surface Mount	256 Gbit	1.2 ms	70 µs	Non-Volatile
GigaDevice Semiconductor (HK) Limited GD25LT256EBARY	FLASH - NOR (SLC)	FLASH	24-TFBGA (6x8)	24-TBGA	32 M	6 ns	166 MHz	2 V	1.65 V	125 °C	-40 °C	DTR QPI Quad I/O SPI	Surface Mount	256 Gbit	3 ms	140 µs	Non-Volatile	Automotive	AEC-Q100
GigaDevice Semiconductor (HK) Limited GD25LT256EFARR	FLASH - NOR (SLC)	FLASH	16-SOP	16-SOIC	32 M	6 ns	166 MHz	2 V	1.65 V	125 °C	-40 °C	DTR QPI Quad I/O SPI	Surface Mount	256 Gbit	3 ms	140 µs	Non-Volatile	Automotive	AEC-Q100	0.295 in	7.5 mm
GigaDevice Semiconductor (HK) Limited GD25LT256EY2GR	FLASH - NOR	FLASH
GigaDevice Semiconductor (HK) Limited GD25LT256EFIRR	FLASH - NOR (SLC)	FLASH	16-SOP	16-SOIC	32 M	6 ns	200 MHz	2 V	1.65 V	85 °C	-40 °C	DTR QPI Quad I/O SPI	Surface Mount	256 Gbit	1.2 ms	70 µs	Non-Volatile			0.295 in	7.5 mm
GigaDevice Semiconductor (HK) Limited GD25LT256EY2GY	FLASH - NOR (SLC)	FLASH	8-WSON (6x8)	8-WDFN Exposed Pad	32 M	6 ns	200 MHz	2 V	1.65 V	105 °C	-40 °C	DTR QPI Quad I/O SPI	Surface Mount	256 Gbit	2 ms	140 µs	Non-Volatile
GigaDevice Semiconductor (HK) Limited GD25LT256EBIRY	FLASH - NOR	FLASH	24-TFBGA (6x8)	24-TBGA	32 M		200 MHz	2 V	1.65 V	85 °C	-40 °C	DTR QPI Quad I/O SPI	Surface Mount	256 Gbit			Non-Volatile
GigaDevice Semiconductor (HK) Limited GD25LT256EYAGR	FLASH - NOR (SLC)	FLASH	8-WSON (6x8)	8-WDFN Exposed Pad	32 M	6 ns	166 MHz	2 V	1.65 V	125 °C	-40 °C	DTR QPI Quad I/O SPI	Surface Mount	256 Gbit	3 ms	140 µs	Non-Volatile

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	4800	$ 3.05

Description

General part information

GD25LT256 Series

FLASH - NOR Memory IC 256Mbit SPI - Quad I/O, QPI, DTR 200 MHz 24-TFBGA (6x8)

Documents

Technical documentation and resources

No documents available