IC FLASH
| Part | Technology | Memory Format | Supplier Device Package | Package / Case | Memory Organization | Access Time | Clock Frequency | Voltage - Supply [Max] | Voltage - Supply [Min] | Operating Temperature [Max] | Operating Temperature [Min] | Memory Interface | Mounting Type | Memory Size | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Memory Type | Grade | Qualification | Package / Case [x] | Package / Case [y] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | FLASH | |||||||||||||||||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 8-WSON (6x8) | 8-WDFN Exposed Pad | 32 M | 6 ns | 200 MHz | 2 V | 1.65 V | 85 °C | -40 °C | DTR QPI Quad I/O SPI | Surface Mount | 256 Gbit | 1.2 ms | 70 µs | Non-Volatile | ||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 24-TFBGA (6x8) | 24-TBGA | 32 M | 6 ns | 166 MHz | 2 V | 1.65 V | 125 °C | -40 °C | DTR QPI Quad I/O SPI | Surface Mount | 256 Gbit | 3 ms | 140 µs | Non-Volatile | Automotive | AEC-Q100 | ||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 16-SOP | 16-SOIC | 32 M | 6 ns | 166 MHz | 2 V | 1.65 V | 125 °C | -40 °C | DTR QPI Quad I/O SPI | Surface Mount | 256 Gbit | 3 ms | 140 µs | Non-Volatile | Automotive | AEC-Q100 | 0.295 in | 7.5 mm |
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | FLASH | |||||||||||||||||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 16-SOP | 16-SOIC | 32 M | 6 ns | 200 MHz | 2 V | 1.65 V | 85 °C | -40 °C | DTR QPI Quad I/O SPI | Surface Mount | 256 Gbit | 1.2 ms | 70 µs | Non-Volatile | 0.295 in | 7.5 mm | ||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 8-WSON (6x8) | 8-WDFN Exposed Pad | 32 M | 6 ns | 200 MHz | 2 V | 1.65 V | 105 °C | -40 °C | DTR QPI Quad I/O SPI | Surface Mount | 256 Gbit | 2 ms | 140 µs | Non-Volatile | ||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR | FLASH | 24-TFBGA (6x8) | 24-TBGA | 32 M | 200 MHz | 2 V | 1.65 V | 85 °C | -40 °C | DTR QPI Quad I/O SPI | Surface Mount | 256 Gbit | Non-Volatile | |||||||
GigaDevice Semiconductor (HK) Limited | FLASH - NOR (SLC) | FLASH | 8-WSON (6x8) | 8-WDFN Exposed Pad | 32 M | 6 ns | 166 MHz | 2 V | 1.65 V | 125 °C | -40 °C | DTR QPI Quad I/O SPI | Surface Mount | 256 Gbit | 3 ms | 140 µs | Non-Volatile |