2N4403TAR

Active

ON Semiconductor

TRANSISTOR,BJT,PNP,40V V(BR)CEO,600MA I(C),TO-92 ROHS COMPLIANT: YES

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsPackage Drawing-135AR-TO-92 3 4.83x4.76 Leadformed Datasheet +1

2N4403TAR

Active

ON Semiconductor

TRANSISTOR,BJT,PNP,40V V(BR)CEO,600MA I(C),TO-92 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsPackage Drawing-135AR-TO-92 3 4.83x4.76 Leadformed Datasheet +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2N4403TAR

Current - Collector (Ic) (Max) [Max]	600 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	750 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

2N4403T Series

PNP Bipolar Junction Transistor, TO-92

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Supplier Device Package
ON Semiconductor 2N4403_J60Z	750 mV	600 mA	TO-226-3 TO-92-3	-55 °C	150 °C	TO-92-3	625 mW	100	200 MHz	PNP	40 V	Through Hole
ON Semiconductor 2N4403RL	750 mV	600 mA	Formed Leads TO-226-3 TO-92-3 Long Body	-55 °C	150 °C	TO-92	625 mW	100	200 MHz	PNP	40 V	Through Hole	TO-226
ON Semiconductor 2N4403RLRAG	750 mV	600 mA	Formed Leads TO-226-3 TO-92-3 Long Body	-55 °C	150 °C	TO-92	625 mW	100	200 MHz	PNP	40 V	Through Hole	TO-226
ON Semiconductor 2N4403_J05Z	750 mV	600 mA	TO-226-3 TO-92-3	-55 °C	150 °C	TO-92-3	625 mW	100	200 MHz	PNP	40 V	Through Hole
ON Semiconductor 2N4403RLRP	750 mV	600 mA	Formed Leads TO-226-3 TO-92-3 Long Body	-55 °C	150 °C	TO-92	625 mW	100	200 MHz	PNP	40 V	Through Hole	TO-226
ON Semiconductor 2N4403RLRM	750 mV	600 mA	Formed Leads TO-226-3 TO-92-3 Long Body	-55 °C	150 °C	TO-92	625 mW	100	200 MHz	PNP	40 V	Through Hole	TO-226
ON Semiconductor 2N4403TAR	750 mV	600 mA	TO-226-3 TO-92-3	-55 °C	150 °C	TO-92-3	625 mW	100	200 MHz	PNP	40 V	Through Hole
ON Semiconductor 2N4403NLBU	750 mV	600 mA	TO-226-3 TO-92-3	-55 °C	150 °C	TO-92-3	625 mW	100	200 MHz	PNP	40 V	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.28
		10	$ 0.17
		100	$ 0.10
		500	$ 0.08
		1000	$ 0.07
	Tape & Box (TB)	2000	$ 0.06
		4000	$ 0.05
		6000	$ 0.05
		10000	$ 0.05
		14000	$ 0.05
		20000	$ 0.04
		50000	$ 0.04
		100000	$ 0.04
		200000	$ 0.03
Newark	Each	2500	$ 0.04
		10000	$ 0.04
		25000	$ 0.03
ON Semiconductor	N/A	1	$ 0.03

Description

General part information

2N4403T Series

The PNP Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources

Package Drawing-135AR-TO-92 3 4.83x4.76 Leadformed

Package Drawing

Datasheet

Product Change Notice EN

Datasheet