2N4403T Series

PNP Bipolar Junction Transistor, TO-92

Catalog

PNP Bipolar Junction Transistor, TO-92

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Supplier Device Package
ON Semiconductor 2N4403_J60Z	750 mV	600 mA	TO-226-3 TO-92-3	-55 °C	150 °C	TO-92-3	625 mW	100	200 MHz	PNP	40 V	Through Hole
ON Semiconductor 2N4403RL	750 mV	600 mA	Formed Leads TO-226-3 TO-92-3 Long Body	-55 °C	150 °C	TO-92	625 mW	100	200 MHz	PNP	40 V	Through Hole	TO-226
ON Semiconductor 2N4403RLRAG	750 mV	600 mA	Formed Leads TO-226-3 TO-92-3 Long Body	-55 °C	150 °C	TO-92	625 mW	100	200 MHz	PNP	40 V	Through Hole	TO-226
ON Semiconductor 2N4403_J05Z	750 mV	600 mA	TO-226-3 TO-92-3	-55 °C	150 °C	TO-92-3	625 mW	100	200 MHz	PNP	40 V	Through Hole
ON Semiconductor 2N4403RLRP	750 mV	600 mA	Formed Leads TO-226-3 TO-92-3 Long Body	-55 °C	150 °C	TO-92	625 mW	100	200 MHz	PNP	40 V	Through Hole	TO-226
ON Semiconductor 2N4403RLRM	750 mV	600 mA	Formed Leads TO-226-3 TO-92-3 Long Body	-55 °C	150 °C	TO-92	625 mW	100	200 MHz	PNP	40 V	Through Hole	TO-226
ON Semiconductor 2N4403TAR	750 mV	600 mA	TO-226-3 TO-92-3	-55 °C	150 °C	TO-92-3	625 mW	100	200 MHz	PNP	40 V	Through Hole
ON Semiconductor 2N4403NLBU	750 mV	600 mA	TO-226-3 TO-92-3	-55 °C	150 °C	TO-92-3	625 mW	100	200 MHz	PNP	40 V	Through Hole

Catalog

PNP Bipolar Junction Transistor, TO-92

Key Features

• High gain

• Pb-Free Packages

Description

The PNP Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.