SS9012GTA

Obsolete

ON Semiconductor

TRANS GP BJT PNP 20V 0.5A 625MW 3-PIN TO-92 FAN-FOLD

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Obsolete

ON Semiconductor

TRANS GP BJT PNP 20V 0.5A 625MW 3-PIN TO-92 FAN-FOLD

Technical Specifications

Parameters and characteristics for this part

Specification	SS9012GTA

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	112
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

PNP Epitaxial Silicon Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Operating Temperature	Mounting Type	Package / Case
ON Semiconductor SS9012GTA	112	500 mA	PNP	100 nA	600 mV	TO-92-3	20 V	625 mW	150 °C	Through Hole	TO-226-3 TO-92-3
ON Semiconductor SS9012HBU	144	500 mA	PNP	100 nA	600 mV	TO-92-3	20 V	625 mW	150 °C	Through Hole	TO-226-3 TO-92-3
ON Semiconductor SS9012HBU	144	500 mA	PNP	100 nA	600 mV	TO-92-3	20 V	625 mW	150 °C	Through Hole	TO-226-3 TO-92-3
ON Semiconductor SS9012HTA	144	500 mA	PNP	100 nA	600 mV	TO-92-3	20 V	625 mW	150 °C	Through Hole	TO-226-3 TO-92-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources