SS9012 Series

PNP Epitaxial Silicon Transistor

Catalog

PNP Epitaxial Silicon Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Operating Temperature	Mounting Type	Package / Case
ON Semiconductor SS9012GTA	112	500 mA	PNP	100 nA	600 mV	TO-92-3	20 V	625 mW	150 °C	Through Hole	TO-226-3 TO-92-3
ON Semiconductor SS9012HBU	144	500 mA	PNP	100 nA	600 mV	TO-92-3	20 V	625 mW	150 °C	Through Hole	TO-226-3 TO-92-3
ON Semiconductor SS9012HBU	144	500 mA	PNP	100 nA	600 mV	TO-92-3	20 V	625 mW	150 °C	Through Hole	TO-226-3 TO-92-3
ON Semiconductor SS9012HTA	144	500 mA	PNP	100 nA	600 mV	TO-92-3	20 V	625 mW	150 °C	Through Hole	TO-226-3 TO-92-3

PNP Epitaxial Silicon Transistor

• High Total Power Dissipation: (PT= 625mW)

• High Collector Current : (IC=-500mA)

• Complementary to SS9013

• Excellent hFElinearity.1W Output Amplifier of Portable Radios in Class B Push-pull Operation.