RZE002P02TL

NRND

Rohm Semiconductor

MOSFET P-CH 20V 200MA EMT3

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NRND

Rohm Semiconductor

MOSFET P-CH 20V 200MA EMT3

Technical Specifications

Parameters and characteristics for this part

Specification	RZE002P02TL

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds	115 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-75, SOT-416
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs [Max]	1.2 Ohm
Supplier Device Package	EMT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Package / Case	Mounting Type
Rohm Semiconductor RZE002P02TL	EMT3	10 V	1 V	20 V	1.2 Ohm	150 mW	200 mA	150 °C	1.2 V 4.5 V	MOSFET (Metal Oxide)	115 pF	1.4 nC	P-Channel	SC-75 SOT-416	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 200mA (Ta) 150mW (Ta) Surface Mount EMT3

Technical documentation and resources