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MOSFET P-CH 20V 200MA EMT3
| Part | Supplier Device Package | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Technology | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | EMT3 | 10 V | 1 V | 20 V | 1.2 Ohm | 150 mW | 200 mA | 150 °C | 1.2 V 4.5 V | MOSFET (Metal Oxide) | 115 pF | 1.4 nC | P-Channel | SC-75 SOT-416 | Surface Mount |