UCC21750QDWQ1

LTB

Texas Instruments

AUTOMOTIVE 5.7KVRMS, ±10A SINGLE-CHANNEL ISOLATED GATE DRIVER W/ DESAT & INTERNAL CLAMP FOR IGBT/SIC

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Search across all available documentation for this part.

DocumentsWhy is high UVLO important for safe IGBT & SiC MOSFET power switch operation SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing +14

UCC21750QDWQ1

LTB

Texas Instruments

AUTOMOTIVE 5.7KVRMS, ±10A SINGLE-CHANNEL ISOLATED GATE DRIVER W/ DESAT & INTERNAL CLAMP FOR IGBT/SIC

Deep-Dive with AI

DocumentsWhy is high UVLO important for safe IGBT & SiC MOSFET power switch operation SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing +14

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	UCC21750QDWQ1

Approval Agency	CSA, VDE, UL, CQC, TUV
Common Mode Transient Immunity (Min) [Min]	150 kV/µs
Current - Peak Output	10 A
Grade	Automotive
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	16-SOIC
Package / Case [x]	0.295 in
Package / Case [y]	7.5 mm
Propagation Delay tpLH / tpHL (Max) [Max]	130 ns
Pulse Width Distortion (Max) [Max]	30 ns
Qualification	AEC-Q100
Rise / Fall Time (Typ) [custom]	27 ns
Rise / Fall Time (Typ) [custom]	33 ns
Supplier Device Package	16-SOIC
Technology	Capacitive Coupling
Voltage - Isolation	5700 Vrms
Voltage - Output Supply [Max]	33 V
Voltage - Output Supply [Min]	13 V

UCC21750-Q1 Series

5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs

Part	Function	Secondary Attributes	Utilized IC / Part	Supplied Contents	Type	Approval Agency	Package / Case [x]	Package / Case	Package / Case [y]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]	Propagation Delay tpLH / tpHL (Max) [Max]	Grade	Voltage - Isolation	Technology	Qualification	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output	Mounting Type	Pulse Width Distortion (Max) [Max]	Number of Channels	Common Mode Transient Immunity (Min) [Min]	Current - Output High, Low [custom]	Current - Output High, Low [custom]
Texas Instruments UCC21750QDWEVM-025	Gate Driver	On-Board LEDs	UCC21750	Board(s)	Power Management
Texas Instruments UCC21750QDWQ1						CQC CSA TUV UL VDE	0.295 in	16-SOIC	7.5 mm	125 °C	-40 °C	16-SOIC	33 V	13 V	130 ns	Automotive	5700 Vrms	Capacitive Coupling	AEC-Q100	27 ns	33 ns	10 A	Surface Mount	30 ns	1	150 kV/µs
Texas Instruments UCC21750DWR						UL VDE	0.295 in	16-SOIC	7.5 mm	125 °C	-40 °C	16-SOIC	33 V	13 V	130 ns		5700 Vrms	Capacitive Coupling		27 ns	33 ns	10 A	Surface Mount	30 ns	1	150 kV/µs	10 A	10 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 8.69
		10	$ 7.85
		25	$ 7.49
		80	$ 6.50
		230	$ 6.21
		440	$ 5.66
Texas Instruments	TUBE	1	$ 8.05
		100	$ 7.05
		250	$ 4.95
		1000	$ 3.98

Description

General part information

UCC21750-Q1 Series

The UCC21750-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750-Q1 has up to ±10-A peak source and sink current.

The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).

The UCC21750-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.