UCC21750-Q1 Series

5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs

Catalog

5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs

Part	Function	Secondary Attributes	Utilized IC / Part	Supplied Contents	Type	Approval Agency	Package / Case [x]	Package / Case	Package / Case [y]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]	Propagation Delay tpLH / tpHL (Max) [Max]	Grade	Voltage - Isolation	Technology	Qualification	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output	Mounting Type	Pulse Width Distortion (Max) [Max]	Number of Channels	Common Mode Transient Immunity (Min) [Min]	Current - Output High, Low [custom]	Current - Output High, Low [custom]
Texas Instruments UCC21750QDWEVM-025	Gate Driver	On-Board LEDs	UCC21750	Board(s)	Power Management
Texas Instruments UCC21750QDWQ1						CQC CSA TUV UL VDE	0.295 in	16-SOIC	7.5 mm	125 °C	-40 °C	16-SOIC	33 V	13 V	130 ns	Automotive	5700 Vrms	Capacitive Coupling	AEC-Q100	27 ns	33 ns	10 A	Surface Mount	30 ns	1	150 kV/µs
Texas Instruments UCC21750DWR						UL VDE	0.295 in	16-SOIC	7.5 mm	125 °C	-40 °C	16-SOIC	33 V	13 V	130 ns		5700 Vrms	Capacitive Coupling		27 ns	33 ns	10 A	Surface Mount	30 ns	1	150 kV/µs	10 A	10 A

Catalog

5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs

Key Features

• 5.7-kV RMS single channel isolated gate driverAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: -40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level 3ADevice CDM ESD classification level C3SiC MOSFETs and IGBTs up to 2121V pk33-V maximum output drive voltage (VDD – VEE)±10-A drive strength and split output150-V/ns minimum CMTI200-ns response time fast DESAT protection4-A Internal active miller clamp400-mA soft turn-off when fault happensIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-link or phase voltageAlarm FLT on overcurrent and reset from RST/ENFast enable and disable response on RST/ENReject < 40-ns noise transient and pulse on input pins12-V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage immunity up to 5 V130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8 mmOperating junction temperature –40°C to 150°CSafety-related certifications:Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)UL 1577 component recognition program5.7-kV RMS single channel isolated gate driverAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: -40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level 3ADevice CDM ESD classification level C3SiC MOSFETs and IGBTs up to 2121V pk33-V maximum output drive voltage (VDD – VEE)±10-A drive strength and split output150-V/ns minimum CMTI200-ns response time fast DESAT protection4-A Internal active miller clamp400-mA soft turn-off when fault happensIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-link or phase voltageAlarm FLT on overcurrent and reset from RST/ENFast enable and disable response on RST/ENReject < 40-ns noise transient and pulse on input pins12-V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage immunity up to 5 V130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8 mmOperating junction temperature –40°C to 150°CSafety-related certifications:Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)UL 1577 component recognition program

Description

The UCC21750-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750-Q1 has up to ±10-A peak source and sink current. The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI). The UCC21750-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost. The UCC21750-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750-Q1 has up to ±10-A peak source and sink current. The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI). The UCC21750-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.