PJQ4463AP_R2_00001

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

60V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ4463AP_R2_00001

Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.1 W
Rds On (Max) @ Id, Vgs	68 mOhm
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs
Panjit International Inc. PJQ4463AP_R2_00001	2.1 W	Surface Mount	MOSFET (Metal Oxide)	-55 °C	150 °C	8-PowerVDFN	17 nC	4.2 A	2.5 V	4.5 V 10 V	DFN3333-8	60 V	20 V	P-Channel	68 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 4.2A (Ta) 2.1W (Ta) Surface Mount DFN3333-8

Technical documentation and resources

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