60V P-CHANNEL ENHANCEMENT MODE M
| Part | Power Dissipation (Max) | Mounting Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs (Max) | FET Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 2.1 W | Surface Mount | MOSFET (Metal Oxide) | -55 °C | 150 °C | 8-PowerVDFN | 17 nC | 4.2 A | 2.5 V | 4.5 V 10 V | DFN3333-8 | 60 V | 20 V | P-Channel | 68 mOhm |