G3R450MT17D

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GeneSiC Semiconductor

SILICON CARBIDE MOSFET N CHANNEL ENHANCEMENT MODE

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GeneSiC Semiconductor

SILICON CARBIDE MOSFET N CHANNEL ENHANCEMENT MODE

Technical Specifications

Parameters and characteristics for this part

Specification	G3R450MT17D

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	88 W
Rds On (Max) @ Id, Vgs	585 mOhm
Supplier Device Package	TO-247-3
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2.7 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Vgs (Max)
GeneSiC Semiconductor G3R450MT17D	1700 V	-55 °C	175 ░C	TO-247-3	585 mOhm	88 W	Through Hole	9 A	2.7 V	15 V	18 nC	N-Channel	TO-247-3	15 V

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General part information

N-Channel 1700 V 9A (Tc) 88W (Tc) Through Hole TO-247-3

Technical documentation and resources