Beta
⌘K
SILICON CARBIDE MOSFET N CHANNEL ENHANCEMENT MODE
| Part | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1700 V | -55 °C | 175 ░C | TO-247-3 | 585 mOhm | 88 W | Through Hole | 9 A | 2.7 V | 15 V | 18 nC | N-Channel | TO-247-3 | 15 V |