GB05MPS17-247

Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 25A TO247-2

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Obsolete

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 25A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	GB05MPS17-247

Capacitance @ Vr, F	334 pF
Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	6 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1700 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Package / Case	Technology	Mounting Type	Current - Average Rectified (Io)	Supplier Device Package	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor GB05MPS17-247	175 ░C	-55 C	No Recovery Time	TO-247-2	SiC (Silicon Carbide) Schottky	Through Hole	25 A	TO-247-2	0 ns	334 pF	1700 V	6 µA	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1700 V 25A Through Hole TO-247-2

Technical documentation and resources