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DIODE SIL CARB 1.7KV 25A TO247-2
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Package / Case | Technology | Mounting Type | Current - Average Rectified (Io) | Supplier Device Package | Reverse Recovery Time (trr) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 175 ░C | -55 C | No Recovery Time | TO-247-2 | SiC (Silicon Carbide) Schottky | Through Hole | 25 A | TO-247-2 | 0 ns | 334 pF | 1700 V | 6 µA | 1.8 V |