TT8U2TCR

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Rohm Semiconductor

MOSFET P-CH 20V 2.4A 8TSST

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Rohm Semiconductor

MOSFET P-CH 20V 2.4A 8TSST

Technical Specifications

Parameters and characteristics for this part

Specification	TT8U2TCR

Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.7 nC
Input Capacitance (Ciss) (Max) @ Vds	850 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	8-TSST
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	FET Feature	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology
Rohm Semiconductor TT8U2TR	150 °C	20 V	10 V	1 V	Schottky Diode (Isolated)	2.4 A	P-Channel	105 mOhm	1.25 W	6.7 nC	8-TSST	1.5 V 4.5 V	850 pF	Surface Mount	MOSFET (Metal Oxide)
Rohm Semiconductor TT8U2TCR	150 °C	20 V	10 V	1 V	Schottky Diode (Isolated)	2.4 A	P-Channel	105 mOhm	1.25 W	6.7 nC	8-TSST	1.5 V 4.5 V	850 pF	Surface Mount	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 2.4A (Ta) 1.25W (Ta) Surface Mount 8-TSST

Technical documentation and resources

No documents available