TT8U2 Series

Catalog

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2.4A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TSST8, 8 PIN

Part	Operating Temperature	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	FET Feature	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology
Rohm Semiconductor TT8U2TR	150 °C	20 V	10 V	1 V	Schottky Diode (Isolated)	2.4 A	P-Channel	105 mOhm	1.25 W	6.7 nC	8-TSST	1.5 V 4.5 V	850 pF	Surface Mount	MOSFET (Metal Oxide)
Rohm Semiconductor TT8U2TCR	150 °C	20 V	10 V	1 V	Schottky Diode (Isolated)	2.4 A	P-Channel	105 mOhm	1.25 W	6.7 nC	8-TSST	1.5 V 4.5 V	850 pF	Surface Mount	MOSFET (Metal Oxide)