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71V3559S75BQI8 - 165-TBGA

71V3559S75BQI8

Obsolete
Renesas Electronics Corporation

3.3V 256K X 18 ZBT SYNCHRONOUS FLOW-THROUGH SRAM W/3.3V I/O

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71V3559S75BQI8 - 165-TBGA

71V3559S75BQI8

Obsolete
Renesas Electronics Corporation

3.3V 256K X 18 ZBT SYNCHRONOUS FLOW-THROUGH SRAM W/3.3V I/O

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification71V3559S75BQI8
Access Time7.5 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization256K x 18
Memory Size4.5 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case165-TBGA
Supplier Device Package165-CABGA (13x15)
TechnologySRAM - Synchronous, SDR (ZBT)
Voltage - Supply [Max]3.465 V
Voltage - Supply [Min]3.135 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

71V3559 Series

The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).