2SA1020-Y,T6NSF(J

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 50V 2A TO92MOD

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 50V 2A TO92MOD

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1020-Y,T6NSF(J

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92MOD
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Package / Case	Transistor Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package
Toshiba Semiconductor and Storage 2SA1020-Y,T6F(J	TO-226-3 TO-92-3 Long Body	PNP	900 mW	2 A	150 °C	1 µA	Through Hole	50 V	100 MHz	70	500 mV	TO-92MOD
Toshiba Semiconductor and Storage 2SA1020-Y(T6TR,A,F	TO-226-3 TO-92-3 Long Body	PNP	900 mW	2 A	150 °C	1 µA	Through Hole	50 V	100 MHz	70	500 mV	TO-92MOD
Toshiba Semiconductor and Storage 2SA1020-Y(T6TOJ,FM	TO-226-3 TO-92-3 Long Body	PNP	900 mW	2 A	150 °C	1 µA	Through Hole	50 V	100 MHz	70	500 mV	TO-92MOD
Toshiba Semiconductor and Storage 2SA1020-Y(T6TR1,AF	TO-226-3 TO-92-3 Long Body	PNP	900 mW	2 A	150 °C	1 µA	Through Hole	50 V	100 MHz	70	500 mV	TO-92MOD
Toshiba Semiconductor and Storage 2SA1020-Y(T6CANOFM	TO-226-3 TO-92-3 Long Body	PNP	900 mW	2 A	150 °C	1 µA	Through Hole	50 V	100 MHz	70	500 mV	TO-92MOD
Toshiba Semiconductor and Storage 2SA1020-Y,T6NSF(J	TO-226-3 TO-92-3 Long Body	PNP	900 mW	2 A	150 °C	1 µA	Through Hole	50 V	100 MHz	70	500 mV	TO-92MOD
Toshiba Semiconductor and Storage 2SA1020-O(TE6,F,M)	TO-226-3 TO-92-3 Long Body	PNP	900 mW	2 A	150 °C	1 µA	Through Hole	50 V	100 MHz	70	500 mV	TO-92MOD

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 50 V 2 A 100MHz 900 mW Through Hole TO-92MOD

Technical documentation and resources