TRANS PNP 50V 2A TO92MOD
| Part | Package / Case | Transistor Type | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | Operating Temperature | Current - Collector Cutoff (Max) [Max] | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-226-3 TO-92-3 Long Body | PNP | 900 mW | 2 A | 150 °C | 1 µA | Through Hole | 50 V | 100 MHz | 70 | 500 mV | TO-92MOD |
Toshiba Semiconductor and Storage | TO-226-3 TO-92-3 Long Body | PNP | 900 mW | 2 A | 150 °C | 1 µA | Through Hole | 50 V | 100 MHz | 70 | 500 mV | TO-92MOD |
Toshiba Semiconductor and Storage | TO-226-3 TO-92-3 Long Body | PNP | 900 mW | 2 A | 150 °C | 1 µA | Through Hole | 50 V | 100 MHz | 70 | 500 mV | TO-92MOD |
Toshiba Semiconductor and Storage | TO-226-3 TO-92-3 Long Body | PNP | 900 mW | 2 A | 150 °C | 1 µA | Through Hole | 50 V | 100 MHz | 70 | 500 mV | TO-92MOD |
Toshiba Semiconductor and Storage | TO-226-3 TO-92-3 Long Body | PNP | 900 mW | 2 A | 150 °C | 1 µA | Through Hole | 50 V | 100 MHz | 70 | 500 mV | TO-92MOD |
Toshiba Semiconductor and Storage | TO-226-3 TO-92-3 Long Body | PNP | 900 mW | 2 A | 150 °C | 1 µA | Through Hole | 50 V | 100 MHz | 70 | 500 mV | TO-92MOD |
Toshiba Semiconductor and Storage | TO-226-3 TO-92-3 Long Body | PNP | 900 mW | 2 A | 150 °C | 1 µA | Through Hole | 50 V | 100 MHz | 70 | 500 mV | TO-92MOD |