PHD13003C,126

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WeEn Semiconductors Co., Ltd

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 1.5 A, 2.1 W, TO-92, THROUGH HOLE

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WeEn Semiconductors Co., Ltd

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 1.5 A, 2.1 W, TO-92, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	PHD13003C,126

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	5
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	2.1 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
WeEn Semiconductors Co., Ltd PHD13005,127	1 V	75 W	150 °C	100 µA	4 A	TO-220AB	Through Hole	10 hFE	400 V	NPN	TO-220-3
WeEn Semiconductors Co., Ltd PHD13003C,126		2.1 W	150 °C	100 µA	1.5 A	TO-92-3	Through Hole		400 V	NPN	TO-226-3 TO-92-3	5
WeEn Semiconductors Co., Ltd PHD13003C,412		2.1 W	150 °C	100 µA	1.5 A	TO-92-3	Through Hole		400 V	NPN	TO-226-3 TO-92-3	5

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General part information

Bipolar (BJT) Transistor NPN 400 V 1.5 A 2.1 W Through Hole TO-92-3

Technical documentation and resources

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