PHD13005,127

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WeEn Semiconductors Co., Ltd

TRANS GP BJT NPN 400V 4A 75000MW 3-PIN(3+TAB) TO-220AB RAIL

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WeEn Semiconductors Co., Ltd

TRANS GP BJT NPN 400V 4A 75000MW 3-PIN(3+TAB) TO-220AB RAIL

Technical Specifications

Parameters and characteristics for this part

Specification	PHD13005,127

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	75 W
Supplier Device Package	TO-220AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	400 V

Part	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
WeEn Semiconductors Co., Ltd PHD13005,127	1 V	75 W	150 °C	100 µA	4 A	TO-220AB	Through Hole	10 hFE	400 V	NPN	TO-220-3
WeEn Semiconductors Co., Ltd PHD13003C,126		2.1 W	150 °C	100 µA	1.5 A	TO-92-3	Through Hole		400 V	NPN	TO-226-3 TO-92-3	5
WeEn Semiconductors Co., Ltd PHD13003C,412		2.1 W	150 °C	100 µA	1.5 A	TO-92-3	Through Hole		400 V	NPN	TO-226-3 TO-92-3	5

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 400 V 4 A 75 W Through Hole TO-220AB

Technical documentation and resources

No documents available