SFW9530TM

Obsolete

ON Semiconductor

MOSFET P-CH 100V 10.5A D2PAK

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Obsolete

ON Semiconductor

MOSFET P-CH 100V 10.5A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SFW9530TM

Current - Continuous Drain (Id) @ 25°C	10.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1035 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	66 W, 3.8 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Technology	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id
ON Semiconductor SFW9530TM	TO-263 (D2PAK)	MOSFET (Metal Oxide)	30 V	3.8 W 66 W	10.5 A	300 mOhm	38 nC	-55 °C	175 ░C	Surface Mount	1035 pF	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	P-Channel	4 V
ON Semiconductor SFW9530TM	TO-263 (D2PAK)	MOSFET (Metal Oxide)	30 V	3.8 W 66 W	10.5 A	300 mOhm	38 nC	-55 °C	175 ░C	Surface Mount	1035 pF	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	P-Channel	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 100 V 10.5A (Tc) 3.8W (Ta), 66W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources