MOSFET P-CH 100V 10.5A D2PAK
| Part | Supplier Device Package | Technology | Vgs (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | TO-263 (D2PAK) | MOSFET (Metal Oxide) | 30 V | 3.8 W 66 W | 10.5 A | 300 mOhm | 38 nC | -55 °C | 175 ░C | Surface Mount | 1035 pF | 100 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | P-Channel | 4 V |
ON Semiconductor | TO-263 (D2PAK) | MOSFET (Metal Oxide) | 30 V | 3.8 W 66 W | 10.5 A | 300 mOhm | 38 nC | -55 °C | 175 ░C | Surface Mount | 1035 pF | 100 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | P-Channel | 4 V |