RSD175N10TL

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Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 17.5A I(D), 100V, 0.119OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, CPT3, SC-63, 3 PIN

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Active

Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 17.5A I(D), 100V, 0.119OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, CPT3, SC-63, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	RSD175N10TL

Current - Continuous Drain (Id) @ 25°C	17.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	950 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs [Max]	105 mOhm
Supplier Device Package	CPT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Vgs (Max)	FET Type	Operating Temperature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology
Rohm Semiconductor RSD175N10TL	20 W	4 V	10 V	100 V	17.5 A	105 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	24 nC	2.5 V	CPT3	20 V	N-Channel	150 °C	Surface Mount	950 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 17.5A (Ta) 20W (Tc) Surface Mount CPT3

Technical documentation and resources