Beta
⌘K
POWER FIELD-EFFECT TRANSISTOR, 17.5A I(D), 100V, 0.119OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, CPT3, SC-63, 3 PIN
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id [Max] | Supplier Device Package | Vgs (Max) | FET Type | Operating Temperature | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 20 W | 4 V | 10 V | 100 V | 17.5 A | 105 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 24 nC | 2.5 V | CPT3 | 20 V | N-Channel | 150 °C | Surface Mount | 950 pF | MOSFET (Metal Oxide) |