TK33S10N1Z,LXHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 33A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 33A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK33S10N1Z,LXHQ

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Input Capacitance (Ciss) (Max) @ Vds	2050 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs [Max]	9.7 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Operating Temperature	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case
Toshiba Semiconductor and Storage TK33S10N1Z,LXHQ	10 V	2050 pF	Surface Mount	28 nC	MOSFET (Metal Oxide)	9.7 mOhm	125 W	175 °C	4 V	N-Channel	33 A	20 V	100 V	DPAK+	DPAK (2 Leads + Tab) SC-63 TO-252-3
Toshiba Semiconductor and Storage TK33S10N1L,LQ	4.5 V 10 V	2250 pF	Surface Mount		MOSFET (Metal Oxide)	9.7 mOhm	125 W	175 °C	2.5 V	N-Channel	33 A	20 V	100 V	DPAK+	DPAK (2 Leads + Tab) SC-63 TO-252-3

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