Beta
⌘K
MOSFET N-CH 100V 33A DPAK
| Part | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Operating Temperature | Vgs(th) (Max) @ Id | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drain to Source Voltage (Vdss) | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 10 V | 2050 pF | Surface Mount | 28 nC | MOSFET (Metal Oxide) | 9.7 mOhm | 125 W | 175 °C | 4 V | N-Channel | 33 A | 20 V | 100 V | DPAK+ | DPAK (2 Leads + Tab) SC-63 TO-252-3 |
Toshiba Semiconductor and Storage | 4.5 V 10 V | 2250 pF | Surface Mount | MOSFET (Metal Oxide) | 9.7 mOhm | 125 W | 175 °C | 2.5 V | N-Channel | 33 A | 20 V | 100 V | DPAK+ | DPAK (2 Leads + Tab) SC-63 TO-252-3 |