SFW9Z34TM

Obsolete

ON Semiconductor

MOSFET P-CH 60V 18A D2PAK

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Obsolete

ON Semiconductor

MOSFET P-CH 60V 18A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SFW9Z34TM

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1155 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.8 W, 82 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Mounting Type
ON Semiconductor SFW9Z34TM	38 nC	MOSFET (Metal Oxide)	10 V	30 V	-55 °C	175 ░C	60 V	1155 pF	P-Channel	140 mOhm	3.8 W 82 W	18 A	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	Surface Mount
ON Semiconductor SFW9Z34TM	38 nC	MOSFET (Metal Oxide)	10 V	30 V	-55 °C	175 ░C	60 V	1155 pF	P-Channel	140 mOhm	3.8 W 82 W	18 A	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 18A (Tc) 3.8W (Ta), 82W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources