MOSFET P-CH 60V 18A D2PAK
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Package / Case | Supplier Device Package | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 38 nC | MOSFET (Metal Oxide) | 10 V | 30 V | -55 °C | 175 ░C | 60 V | 1155 pF | P-Channel | 140 mOhm | 3.8 W 82 W | 18 A | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263 (D2PAK) | Surface Mount |
ON Semiconductor | 38 nC | MOSFET (Metal Oxide) | 10 V | 30 V | -55 °C | 175 ░C | 60 V | 1155 pF | P-Channel | 140 mOhm | 3.8 W 82 W | 18 A | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263 (D2PAK) | Surface Mount |