SS9013GTA

Obsolete

ON Semiconductor

TRANS NPN 20V 0.5A TO92-3

Search across all available documentation for this part.

Obsolete

ON Semiconductor

TRANS NPN 20V 0.5A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	SS9013GTA

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	112
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

Part	Operating Temperature	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor SS9013GTA	150 °C	TO-226-3 TO-92-3	20 V	NPN	100 nA	TO-92-3	Through Hole	600 mV	625 mW	112	500 mA
ON Semiconductor SS9013FBU	150 °C	TO-226-3 TO-92-3	20 V	NPN	100 nA	TO-92-3	Through Hole	600 mV	625 mW		500 mA	78
ON Semiconductor SS9013GBU	150 °C	TO-226-3 TO-92-3	20 V	NPN	100 nA	TO-92-3	Through Hole	600 mV	625 mW	112	500 mA
ON Semiconductor SS9013GBU	150 °C	TO-226-3 TO-92-3	20 V	NPN	100 nA	TO-92-3	Through Hole	600 mV	625 mW	112	500 mA
ON Semiconductor SS9013GTA	150 °C	TO-226-3 TO-92-3	20 V	NPN	100 nA	TO-92-3	Through Hole	600 mV	625 mW	112	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 20 V 500 mA 625 mW Through Hole TO-92-3

Technical documentation and resources