SS9013FBU

Obsolete

ON Semiconductor

TRANS NPN 20V 0.5A TO92-3

Search across all available documentation for this part.

Obsolete

ON Semiconductor

TRANS NPN 20V 0.5A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	SS9013FBU

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	78
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

Part	Operating Temperature	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor SS9013GTA	150 °C	TO-226-3 TO-92-3	20 V	NPN	100 nA	TO-92-3	Through Hole	600 mV	625 mW	112	500 mA
ON Semiconductor SS9013FBU	150 °C	TO-226-3 TO-92-3	20 V	NPN	100 nA	TO-92-3	Through Hole	600 mV	625 mW		500 mA	78
ON Semiconductor SS9013GBU	150 °C	TO-226-3 TO-92-3	20 V	NPN	100 nA	TO-92-3	Through Hole	600 mV	625 mW	112	500 mA
ON Semiconductor SS9013GBU	150 °C	TO-226-3 TO-92-3	20 V	NPN	100 nA	TO-92-3	Through Hole	600 mV	625 mW	112	500 mA
ON Semiconductor SS9013GTA	150 °C	TO-226-3 TO-92-3	20 V	NPN	100 nA	TO-92-3	Through Hole	600 mV	625 mW	112	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 20 V 500 mA 625 mW Through Hole TO-92-3

Technical documentation and resources