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71V3576S133PFG8 - 100-TQFP

71V3576S133PFG8

Obsolete
Renesas Electronics Corporation

3.3V 128K X 36 SYNCHRONOUS PIPELINED BURST SRAM W/3.3V I/O

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71V3576S133PFG8 - 100-TQFP

71V3576S133PFG8

Obsolete
Renesas Electronics Corporation

3.3V 128K X 36 SYNCHRONOUS PIPELINED BURST SRAM W/3.3V I/O

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification71V3576S133PFG8
Access Time4.2 ns
Clock Frequency133 MHz
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization128K x 36
Memory Size4.5 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case100-LQFP
Supplier Device Package100-TQFP (14x14)
TechnologySRAM - Synchronous, SDR
Voltage - Supply [Max]3.465 V
Voltage - Supply [Min]3.135 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

71V3576 Series

The 71V3576 3.3V CMOS SRAM is organized as 128K x 36. The 71V3576 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

Documents

Technical documentation and resources