DSEI12-06AS-TUB

Active

IXYS

DIODE GEN PURP 600V 14A TO263AA

Search across all available documentation for this part.

Active

IXYS

DIODE GEN PURP 600V 14A TO263AA

Technical Specifications

Parameters and characteristics for this part

Specification	DSEI12-06AS-TUB

Current - Average Rectified (Io)	14 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Mounting Type	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Package / Case	Reverse Recovery Time (trr)	Capacitance @ Vr, F
IXYS DSEI12-10A	2.7 V	250 µA	Through Hole	Standard	150 °C	-40 °C	TO-220AC	12 A	1000 V	200 mA 500 ns	TO-220-2	60 ns
IXYS DSEI12-12AZ-TUB	2.6 V	250 µA	Surface Mount	Standard	150 °C	-40 °C	TO-263HV	11 A	1.2 kV	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	50 ns	6 pF
IXYS DSEI12-06AS-TUB	1.7 V	50 µA	Surface Mount	Standard	150 °C	-40 °C	TO-263AA	14 A	600 V	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	50 ns
IXYS DSEI12-06A	1.7 V	50 µA	Through Hole	Standard	150 °C	-40 °C	TO-220AC	14 A	600 V	200 mA 500 ns	TO-220-2	50 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 14A Surface Mount TO-263AA

Technical documentation and resources

No documents available