DSEI12-10A

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IXYS

DIODE GEN PURP 1KV 12A TO220AC

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IXYS

DIODE GEN PURP 1KV 12A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	DSEI12-10A

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	60 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	2.7 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Mounting Type	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Package / Case	Reverse Recovery Time (trr)	Capacitance @ Vr, F
IXYS DSEI12-10A	2.7 V	250 µA	Through Hole	Standard	150 °C	-40 °C	TO-220AC	12 A	1000 V	200 mA 500 ns	TO-220-2	60 ns
IXYS DSEI12-12AZ-TUB	2.6 V	250 µA	Surface Mount	Standard	150 °C	-40 °C	TO-263HV	11 A	1.2 kV	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	50 ns	6 pF
IXYS DSEI12-06AS-TUB	1.7 V	50 µA	Surface Mount	Standard	150 °C	-40 °C	TO-263AA	14 A	600 V	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	50 ns
IXYS DSEI12-06A	1.7 V	50 µA	Through Hole	Standard	150 °C	-40 °C	TO-220AC	14 A	600 V	200 mA 500 ns	TO-220-2	50 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 12A Through Hole TO-220AC

Technical documentation and resources