RND030N20TL

LTB

Rohm Semiconductor

MOSFET, N-CH, 200V, 3A, TO-252

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LTB

Rohm Semiconductor

MOSFET, N-CH, 200V, 3A, TO-252

Technical Specifications

Parameters and characteristics for this part

Specification	RND030N20TL

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.7 nC
Input Capacitance (Ciss) (Max) @ Vds	270 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	850 mW, 20 W
Rds On (Max) @ Id, Vgs	870 mOhm
Supplier Device Package	CPT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature	Package / Case	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package
Rohm Semiconductor RND030N20TL	200 V	MOSFET (Metal Oxide)	3 A	Surface Mount	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	20 W 850 mW	270 pF	30 V	10 V	6.7 nC	870 mOhm	CPT3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 3A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3

Technical documentation and resources

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