Beta
⌘K
MOSFET, N-CH, 200V, 3A, TO-252
| Part | Drain to Source Voltage (Vdss) | Technology | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Operating Temperature | Package / Case | FET Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 200 V | MOSFET (Metal Oxide) | 3 A | Surface Mount | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | 20 W 850 mW | 270 pF | 30 V | 10 V | 6.7 nC | 870 mOhm | CPT3 |