PJW5N10-AU_R2_000A1

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Panjit International Inc.

100V N-CHANNEL ENHANCEMENT MODE

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Active

Panjit International Inc.

100V N-CHANNEL ENHANCEMENT MODE

Technical Specifications

Parameters and characteristics for this part

Specification	PJW5N10-AU_R2_000A1

Current - Continuous Drain (Id) @ 25°C	5 A, 3.1 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	707 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.1 W, 8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Supplier Device Package	Power Dissipation (Max)	Qualification	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type
Panjit International Inc. PJW5N10-AU_R2_000A1	12 nC	3.5 V	707 pF	TO-261-4 TO-261AA	SOT-223	3.1 W 8 W	AEC-Q101	Automotive	-55 °C	150 °C	3.1 A 5 A	20 V	100 V	MOSFET (Metal Oxide)	130 mOhm	6 V 10 V	Surface Mount	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 3.1A (Ta), 5A (Tc) 3.1W (Ta), 8W (Tc) Surface Mount SOT-223

Technical documentation and resources