Beta
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100V N-CHANNEL ENHANCEMENT MODE
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Supplier Device Package | Power Dissipation (Max) | Qualification | Grade | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drain to Source Voltage (Vdss) | Technology | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 12 nC | 3.5 V | 707 pF | TO-261-4 TO-261AA | SOT-223 | 3.1 W 8 W | AEC-Q101 | Automotive | -55 °C | 150 °C | 3.1 A 5 A | 20 V | 100 V | MOSFET (Metal Oxide) | 130 mOhm | 6 V 10 V | Surface Mount | N-Channel |