MUR2X060A02

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GeneSiC Semiconductor

FAST RECOVERY / HIGH EFFICIENCY DIODES ROHS

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GeneSiC Semiconductor

FAST RECOVERY / HIGH EFFICIENCY DIODES ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	MUR2X060A02

Current - Average Rectified (Io) (per Diode)	60 A
Current - Reverse Leakage @ Vr	25 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOT-227
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Technology	Diode Configuration	Package / Case	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed
GeneSiC Semiconductor MUR2X060A02	175 ░C	-55 C	60 A	Standard	2 Independent	SOT-227-4 miniBLOC	75 ns	1 V	SOT-227	25 µA	200 mA 500 ns	Chassis Mount	200 V
GeneSiC Semiconductor MUR2X060A12	175 ░C	-55 C	60 A	Standard	2 Independent	SOT-227-4 miniBLOC		2.35 V	SOT-227		200 mA	Chassis Mount	1.2 kV	Standard Recovery >500ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 200 V 60A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources