FAST RECOVERY / HIGH EFFICIENCY DIODES ROHS
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) (per Diode) | Technology | Diode Configuration | Package / Case | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Current - Reverse Leakage @ Vr | Speed | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 175 ░C | -55 C | 60 A | Standard | 2 Independent | SOT-227-4 miniBLOC | 75 ns | 1 V | SOT-227 | 25 µA | 200 mA 500 ns | Chassis Mount | 200 V | |
GeneSiC Semiconductor | 175 ░C | -55 C | 60 A | Standard | 2 Independent | SOT-227-4 miniBLOC | 2.35 V | SOT-227 | 200 mA | Chassis Mount | 1.2 kV | Standard Recovery >500ns |