MUR40040CT

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GeneSiC Semiconductor

DIODE MODULE GP 400V 200A 2TOWER

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GeneSiC Semiconductor

DIODE MODULE GP 400V 200A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MUR40040CT

Current - Average Rectified (Io) (per Diode)	200 A
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Reverse Recovery Time (trr)	150 ns
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Package / Case	Supplier Device Package	Technology	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Reverse Recovery Time (trr)	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
GeneSiC Semiconductor MUR40040CT	1.3 V	200 mA 500 ns	Twin Tower	Twin Tower	Standard	200 A	400 V	1 Pair Common Cathode	150 ns	Chassis Mount	150 °C	-55 °C
GeneSiC Semiconductor MUR40040CTR	1.3 V	200 mA 500 ns	Twin Tower	Twin Tower	Standard	200 A	400 V	1 Pair Common Anode	150 ns	Chassis Mount	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	80	$ 110.13

General part information

Diode Array 1 Pair Common Cathode 400 V 200A Chassis Mount Twin Tower

Technical documentation and resources