DIODE MODULE GP 400V 200A 2TOWER
| Part | Voltage - Forward (Vf) (Max) @ If | Speed | Package / Case | Supplier Device Package | Technology | Current - Average Rectified (Io) (per Diode) | Voltage - DC Reverse (Vr) (Max) [Max] | Diode Configuration | Reverse Recovery Time (trr) | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1.3 V | 200 mA 500 ns | Twin Tower | Twin Tower | Standard | 200 A | 400 V | 1 Pair Common Cathode | 150 ns | Chassis Mount | 150 °C | -55 °C |
GeneSiC Semiconductor | 1.3 V | 200 mA 500 ns | Twin Tower | Twin Tower | Standard | 200 A | 400 V | 1 Pair Common Anode | 150 ns | Chassis Mount | 150 °C | -55 °C |