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TIP102G - ONSEMI ISL9V3040P3

TIP102G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, NPN, 100 V, 2 W, 8 A, 20 ROHS COMPLIANT: YES

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TIP102G - ONSEMI ISL9V3040P3

TIP102G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, NPN, 100 V, 2 W, 8 A, 20 ROHS COMPLIANT: YES

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Technical Specifications

Parameters and characteristics for this part

SpecificationTIP102G
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 hFE
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]2 W
Supplier Device PackageTO-220
Vce Saturation (Max) @ Ib, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 50$ 0.82
100$ 0.79
DigikeyTube 1$ 2.11
10$ 1.35
100$ 0.92
500$ 0.73
1000$ 0.67
2000$ 0.62
5000$ 0.56
10000$ 0.56
NewarkEach 1$ 2.22
10$ 1.30
100$ 1.14
500$ 1.02
1000$ 1.00
ON SemiconductorN/A 1$ 0.60

Description

General part information

TIP102 Series

The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications. The TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) are complementary devices.