TIP102

Obsolete

ON Semiconductor

TRANS NPN DARL 100V 8A TO220

Search across all available documentation for this part.

Obsolete

ON Semiconductor

TRANS NPN DARL 100V 8A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TIP102

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	2 W
Supplier Device Package	TO-220
Vce Saturation (Max) @ Ib, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce	Mounting Type
ON Semiconductor TIP102	2.5 V	8 A	TO-220	2 W	TO-220-3	50 µA	100 V	150 °C	-65 °C	1000 hFE	Through Hole
ON Semiconductor TIP102G	2.5 V	8 A	TO-220	2 W	TO-220-3	50 µA	100 V	150 °C	-65 °C	1000 hFE	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 2 W Through Hole TO-220

Technical documentation and resources