2SD2153T100V

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Rohm Semiconductor

SMALL SIGNAL BIPOLAR TRANSISTOR, 2A I(C), 25V V(BR)CEO, 1-ELEMENT, NPN, SILICON, SC-62, 3 PIN

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Rohm Semiconductor

SMALL SIGNAL BIPOLAR TRANSISTOR, 2A I(C), 25V V(BR)CEO, 1-ELEMENT, NPN, SILICON, SC-62, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	2SD2153T100V

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	820
Frequency - Transition	110 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

Part	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Mounting Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Power - Max [Max]
Rohm Semiconductor 2SD2153T100W	500 mV	25 V	NPN	Surface Mount	TO-243AA	1200	2 A	110 MHz	500 nA	150 °C	2 W
Rohm Semiconductor 2SD2153T100V	500 mV	25 V	NPN	Surface Mount	TO-243AA	820	2 A	110 MHz	500 nA	150 °C	2 W
Rohm Semiconductor 2SD2153T100U	500 mV	25 V	NPN	Surface Mount	TO-243AA	820	2 A	110 MHz	500 nA	150 °C	2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA

Excellent DC current gain characteristics.

hFE: 820-1800

Technical documentation and resources