2SD2153T100W

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Rohm Semiconductor

TRANS NPN 25V 2A MPT3

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Active

Rohm Semiconductor

TRANS NPN 25V 2A MPT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SD2153T100W

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1200
Frequency - Transition	110 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

Part	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Mounting Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Power - Max [Max]
Rohm Semiconductor 2SD2153T100W	500 mV	25 V	NPN	Surface Mount	TO-243AA	1200	2 A	110 MHz	500 nA	150 °C	2 W
Rohm Semiconductor 2SD2153T100V	500 mV	25 V	NPN	Surface Mount	TO-243AA	820	2 A	110 MHz	500 nA	150 °C	2 W
Rohm Semiconductor 2SD2153T100U	500 mV	25 V	NPN	Surface Mount	TO-243AA	820	2 A	110 MHz	500 nA	150 °C	2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 25 V 2 A 110MHz 2 W Surface Mount MPT3

Technical documentation and resources