GA10JT12-263

Obsolete

GeneSiC Semiconductor

SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS

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Obsolete

GeneSiC Semiconductor

SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	GA10JT12-263

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	1200 V
Mounting Type	Surface Mount
Operating Temperature	175 °C
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs [Max]	120 mOhm
Technology	SiC (Silicon Carbide Junction Transistor)

Part	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature	Technology	Power Dissipation (Max)
GeneSiC Semiconductor GA10JT12-263	25 A	Surface Mount	120 mOhm	1200 V	175 °C	SiC (Silicon Carbide Junction Transistor)	170 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

LCSC	N/A	1	$ 0.00

General part information

1200 V 25A (Tc) 170W (Tc) Surface Mount

Technical documentation and resources