Beta
⌘K
SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS
| Part | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Operating Temperature | Technology | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 25 A | Surface Mount | 120 mOhm | 1200 V | 175 °C | SiC (Silicon Carbide Junction Transistor) | 170 W |